S04XXXH ? january 1995 scr symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tc= 110 c4 a i t(av) average on-state current (180 conduction angle) tc= 110 c 2.5 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 55 a tp = 10 ms 50 i 2 t i 2 t value for fusing tp = 10 ms 12.5 a 2 s di/dt critical rate of rise of on-state current i g = 100 ma di g /dt = 1 a/ m s. 100 a/ m s t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s at 4.5mm from case 260 c absolute ratings (limiting values) to220 non-insulated (plastic) i t(rms) =4a v drm = 200v to 800v high surge current capability features symbol parameter voltage unit bdmn v drm v rrm repetitive peak off-state voltage t j = 125 c 200 400 600 800 v the S04XXXH series of scrs uses a high performance mesa glass pnpn technology. these parts are intended for general purpose applications. description k g a 1/5
p g (av) =1w p gm =10w(tp =20 m s) i gm =4a(tp=20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 60 c/w rth(j-c) junction to case for dc 4 c/w thermal resistances symbol test conditions sensitivity unit 06 10 17 i gt v d =12v (dc) r l =33 w tj= 25 c min 0.5 10 4 ma max 5 25 15 v gt v d =12v (dc) r l =33 w tj= 25 c max 1.5 v v gd v d =v drm r l =3.3k w tj= 125 c min 0.2 v tgt v d =v drm i tm =3xi t(av ) di g /dt = 0.5a/ m si g = 40ma tj= 25 c typ 2 m s i h i t = 250ma gate open tj= 25 c max 25 75 50 ma i l i g =1.2 i gt tj= 25 c max 50 150 100 ma v tm i tm = 8a tp= 380 m s tj= 25 c max 1.6 v i drm i rrm v d =v drm v r =v rrm tj= 25 c max 5 m a tj= 110 c max 500 dv/dt v d =67%v drm gate open tj= 110 c min 200 100 v/ m s tj= 110 c typ 50 tq i tm =3xi t(av )v r =35v di/dt=10a/ m s tp=100 m s dv/dt=10v/ m s v d = 67%v drm tj= 110 c max 100 m s electrical characteristics ordering information s0410mh scr mesa glass current package : h = to220 non-insulated voltage sensitivity ? S04XXXH 2/5
00.511.522.533.54 0 0.5 1 1.5 2 2.5 3 3.5 p (w) = 180 o = 120 o =90 o =60 o =30 o dc i (a) t(av) 360 o fig.1 : maximum average power dissipation ver- sus average on-state current. 0 102030405060708090100110120130 0 1 2 3 4 5 i (a) t(av) = 180 o dc tcase ( c) o fig.3 : average on-state current versus case tem- perature. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20 40 60 80 100 120 140 0 0.5 1 1.5 2 2.5 3 3.5 -110 -115 -120 -125 p (w) tcase ( c) o rth = 0 c/w 5c/w 10 c/w 15 c/w o o o o = 180 o tamb ( c) o fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and tcase) for different thermal resistances heatsink + contact. 1e-3 1e-2 1e-1 1e +0 1 e +1 1e +2 5 e+2 0.01 0.1 1 zth/rth zt h( j-c) zt h( j-a) tp (s) fig.4 : relative variation of thermal impedance versus pulse duration. 1 10 100 100 0 0 10 20 30 40 50 60 tj initial = 25 c o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? S04XXXH 3/5
110 1 10 100 1000 i (a). i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 00.511.522.533.544.5 1 10 100 i (a) tm tj initial 25 c o tj max v (v) tm tj max vto =0.93 v rt =0.072 fig.8 : on-state characteristics (maximum values). ? S04XXXH 4/5
package mechanical data to220 non-insulated (plastic) d g i h j b a l n1 m n o p c f ref. dimensions millimeters inches typ. min. max. typ. min. max. a 10.3 0.406 b 6.3 6.5 0.248 0.256 c 9.1 0.358 d 12.7 0.500 f 4.2 0.165 g 3.0 0.118 h 4.5 4.7 0.177 0.185 i 3.53 3.66 0.139 0.144 j 1.2 1.3 0.047 0.051 l 0.9 0.035 m 2.7 0.106 n 5.3 0.209 n1 2.54 0.100 o 1.2 1.4 0.047 0.055 p 1.15 0.045 marking : type number weight : 1.8 g information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. ? S04XXXH 5/5
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